Pixel or display with sub pixels selected by antifuse programming

ABSTRACT

Devices and methods of their fabrication for pixels or displays are disclosed. Pixels and displays having redundant subpixels are described. Subpixels are initially isolated by an unprogrammed antifuse. A subpixel is connected to the display by programming the antifuse, electrically connecting it to the pixel or display. Defective subpixels can be determined by photoluminescent testing or electroluminescent testing, or both. A redundant subpixel can replace a defective subpixel before pixel or display fabrication is complete.

FIELD

The embodiments of the invention are directed generally to pixels anddisplays, especially to those using micro light emitting diodes (LEDs),and methods to manufacture pixels and displays. The embodiments includepixels and displays with redundant subpixels wherein a functionalsubpixel can replace a defective subpixel before fabrication iscomplete.

BACKGROUND INFORMATION

Displays have become ubiquitous with sizes ranging from very large, suchas those utilized in sports stadiums, to very small, such as those inwatches, and various applications, including projections of small imagesonto large surfaces and virtual reality headsets. There is need forhigher resolution in small displays, particularly for the latter twoapplications. There is also a need for energy-efficient displays, asmany displays are powered by batteries.

Active matrix displays, in which individual pixels are driven bycircuitry, are advantageous for high resolution and better image qualitycompared to passive matrix displays. Active matrix displays withsemiconductor-based micro LEDs are well suited for small,energy-efficient displays due to their efficiency, brightness, and smallsize. Micro LEDs are smaller in size than standard LEDs. For example, astandard LED used in liquid crystal flat panel display may have alargest dimension of 200 microns. A micro LED may have a largestdimension of 50 microns or less. Micro LEDs have greater luminousefficiency and can be arranged in higher pixel densities than standardLEDs, making them good candidates for the luminous source in a small,high resolution display.

Fabrication of displays with micro LEDs poses challenges compared withstandard LEDs. Pick-and-place tools used with standard LEDs do not workwith micro LEDs. Even if pick-and-place tools could be developed to workwith micro LEDs, it is advantageous to incorporate very large numbers ofmicro LEDs into a display, and the relatively slow speed ofpick-and-place tools would be cost prohibitive to fabricating a displaywith, for example, millions of micro LEDs. Different methods tofabricate micro LEDs into the display must therefore be developed.Methods that incorporate hundreds, thousands, or millions of micro LEDssimultaneously into a display can make micro LED displays costeffective.

The replacement of defective micro LEDs or replacement of defectivesubpixels during manufacture of a display must also be considered. Inmany applications, standard size LEDs are fabricated and testedindividually to verify functionality prior to incorporation into adisplay. But this approach is not feasible for fabrication methods thatincorporate hundreds, thousands, or millions of micro LEDssimultaneously into a display. New methods that allow for thereplacement of defective micro LEDs and/or subpixels can allow for theproduction of cost effective defect-free displays or displays with verylow levels of defects.

SUMMARY

Devices and methods of their fabrication for pixels or displays aredescribed. In an embodiment, a pixel comprises a plurality of datalines, wherein each data line is coupled to a data circuit, a pluralityof select lines, wherein each select line is coupled to a selectcircuit, a plurality of first group subpixels, and a plurality of secondgroup subpixels. Each first group subpixel comprises at least one firstgroup LED, a first group control circuit coupled to the first group LED,and a first group antifuse disposed between a select line and the firstgroup control circuit. Each second group subpixel comprises at least onesecond group LED, a second group control circuit coupled to the secondgroup LED, and a second group antifuse disposed between a select lineand the second group control circuit.

In an embodiment, a pixel comprises a plurality of data lines, whereineach data line is coupled to a data circuit, a plurality of selectlines, wherein each select line is coupled to a select circuit, aplurality of first group subpixels, and a plurality of second groupsubpixels. Each first group subpixel comprises at least one first groupLED, a first group control circuit coupled to the first group LED, and afirst group antifuse disposed between a data line and the first groupcontrol circuit. Each second group subpixel comprises at least onesecond group LED, a second group control circuit coupled to the secondgroup LED, and a second group antifuse disposed between a data line andthe second group control circuit.

In an embodiment, a pixel comprises a plurality of data lines, whereineach data line is coupled to a data circuit, a plurality of selectlines, wherein each select line is coupled to a select circuit, aplurality of power lines, a plurality of first group subpixels, and aplurality of second group subpixels. Each first group subpixel comprisesat least one first group LED, a first group control circuit coupled tothe first group LED, and a first group antifuse disposed between a powerline and the first group control circuit. Each second group subpixelcomprises at least one second group LED, a second group control circuitcoupled to the second group LED, and a second group antifuse disposedbetween a power line and the second group control circuit.

In an embodiment, a display panel comprises a plurality of datacircuits, a plurality of select circuits, and a plurality of subpixelsarranged in a two dimensional array. Each subpixel comprises an LED, acontrol circuit coupled to the LED, and an antifuse disposed between thecontrol circuit and a select circuit.

In an embodiment, a display panel comprises a plurality of data circuit,a plurality of select circuits, and a plurality of subpixels arranged ina two dimensional array. Each subpixel comprises an LED, a controlcircuit coupled to the LED, and an antifuse disposed between the controlcircuit and a data circuit.

In an embodiment, a method to make a pixel is described. The stepscomprise providing a backboard with a plurality of data circuits and aplurality of select circuits. A plurality of control circuits and aplurality of antifuses are formed on a transistor substrate. Eachantifuse is coupled to a control circuit. A plurality of LEDs is formedon an LED substrate. The plurality of LEDs is then bonded to theplurality of control circuits, resulting in each LED is being coupled toa control circuit. The control circuits are then bonded to thebackboard. After bonding the control circuits to the backboard, anantifuse is disposed between each control circuit and either a datacircuit or a select circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings are idealized representations to describe embodiments ofthe present disclosure and are not meant to be actual views of anyparticular component, structure, or device. The drawings are not toscale, and the thickness and dimensions of some layers may beexaggerated for clarity. Variations from the shapes of the illustrationsare to be expected. For example, a region illustrated as a box shape maytypically have rough and/or nonlinear features. Sharp angles that areillustrated may be rounded. The drawings may show components in fewernumbers but in larger sizes than actually the case. Like numerals referto like components throughout.

For the sake of explanation, the present disclosure will adopt an X-Y-Zorthogonal coordinate system. The term “largest dimension” is to meanthe largest dimension in one of the X-Y-Z directions. The features,aspects, and advantages of the embodiments described herein will becomebetter understood with regard to the following description, appendedclaims, and accompanying drawings, where:

FIG. 1A is a plan view schematic of a pixel in accordance with anembodiment of the invention.

FIG. 1B is a cross-sectional schematic of a portion of pixel inaccordance with an embodiment of the invention.

FIG. 2 is a cross-sectional schematic of a portion of pixel inaccordance with an embodiment of the invention.

FIG. 3 is a cross-sectional schematic of a portion of pixel inaccordance with an embodiment of the invention.

FIG. 4A is a circuit diagram of a subpixel in accordance with anembodiment of the invention.

FIG. 4B is a circuit diagram of a subpixel in accordance with anembodiment of the invention.

FIG. 4C is a circuit diagram of a subpixel in accordance with anembodiment of the invention.

FIG. 5A is a circuit diagram of a pixel in accordance with an embodimentof the invention.

FIG. 5B is a plan view diagram of a pixel with the path of laser lightfor photoluminescent testing in accordance with an embodiment of theinvention.

FIG. 5C is a circuit diagram of a pixel after testing and antifuseprogramming in accordance with an embodiment of the invention.

FIG. 5D is a circuit diagram of a pixel after testing and antifuseprogramming in accordance with an embodiment of the invention.

FIG. 5E is a circuit diagram of a pixel in accordance with an embodimentof the invention.

FIG. 5F is a circuit diagram of a pixel in accordance with an embodimentof the invention.

FIG. 6 is a plan view schematic of a display in accordance with anembodiment of the invention.

FIGS. 7A-D are cross-sectional schematics of a sequence of fabricationsteps for an LED apparatus in accordance with an embodiment of theinvention.

FIGS. 8A-D are cross-sectional schematics of a sequence of fabricationsteps for a control circuit+antifuse apparatus in accordance with anembodiment of the invention.

FIG. 9 is a cross-sectional schematic showing the flipping of the LEDapparatus and bonding to the control circuit+antifuse apparatus inaccordance with an embodiment of the invention.

FIGS. 10A-F are cross-sectional schematics of a sequence of fabricationsteps for a pixel in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF EMBODIMENTS

In this application, pixels, displays, and methods to make them aredescribed. A pixel comprises one or more subpixels. The embodiments ofthe pixels and displays described will comprise redundant subpixels. Thepixel or display in these embodiments will have more subpixels than isneeded to make the pixel or display functional. If a subpixel is foundto be defective by testing during manufacture, a redundant subpixel canbe selected to replace the defective subpixel. The pixel or display willbe initially fabricated with at least some, if not all, of the subpixelselectrically isolated by an unprogrammed antifuse. An antifuse is adevice that is fabricated in a highly resistive state, also called anunprogrammed state, and becomes permanently conductive being programmed,called a programmed state. It is to be appreciated that when referenceis made to an antifuse, the antifuse may be in either an unprogrammed orprogrammed state. An unprogrammed antifuse electrically isolates adevice. A programmed antifuse does not electrically isolate a device.During manufacture, the subpixels can be tested for light emission. Ifthe LED of the subpixel is determined to emit functional light, then thesubpixel is connected to other circuitry in the pixel or display byprogramming the antifuse with a voltage pulse. In general, defectivesubpixels are replaced by redundant functional subpixels by programmingthe antifuse of the redundant subpixels. In some cases, a subpixel witha programmed antifuse may be defective and not emit light, in which caseit is replaced by a redundant functional subpixel.

Active matrix displays can be a two dimensional array of pixels. Eachpixel in a color active matrix display must be capable of emittingalmost any color. One method to achieve pixel color is to combine theprimary colors of three or more subpixels. Each subpixel emits light ofa single primary color. For example, a pixel may comprise threesubpixels, one of which may emit red light, another emits green light,and the final one emits blue light. By emitting light from one, two, orall three subpixels and by varying the intensity of light from thesethree subpixels, the light output of the pixel may appear to be almostany color or intensity.

Several embodiments describing pixels or displays comprising redundantsubpixels, methods to identify functional subpixels and connect themelectrically to other circuitry, and fabrication methods for thesepixels and displays are described in the disclosure. The disclosure willbe divided into three parts: I) embodiments of pixels and displays, II)embodiments of methods to test subpixels and program antifuses ofselected subpixels, and III) an embodiment of a method to manufacturepixels and displays.

I Embodiments of Pixels and Displays

FIG. 1A is a plan view of one embodiment of a pixel according to thepresent invention. Pixel 6 comprises six subpixels 10 a, 20 a, 30 a, 10b, 20 b, and 30 b. The subpixels are arranged in two groups, with aplurality of first group subpixels 10 a, 20 a, and 30 a, and a pluralityof second group subpixels 10 b, 20 b, and 30 b. The second groupsubpixels are redundant to the first group subpixels.

FIG. 1B is a cross-section Z1-Z2 through pixel 6 in FIG. 1A.Cross-section Z1-Z2 shows first group subpixels 10 a, 20 a, and 30 a.First group subpixel 10 a will be described in detail, and first groupsubpixels 20 a and 30 a share many similar elements to first groupsubpixel 10 a. There are a plurality of select lines 60, a plurality ofdata lines 70, and a plurality of power lines 72. First group subpixel10 a comprises a first group LED 22, a first group control circuit 40,and a first group antifuse 50. LED 22 can be a micro LED having alargest dimension L1 in either the X or Y dimensions of 50 microns orless, although suitable larger dimensions are possible. First groupantifuse 50 is disposed between first group control circuit 40 and aselect line 60. Select line 60 is a conductive interconnect that iscoupled to a select circuit (not shown) and first group antifuse 50.Data line 70 is a conductive interconnect that is coupled to a datacircuit (not shown) and first group control circuit 40. Awavelength-converting layer 80 a overlies first group LED 22 of firstgroup subpixel 10 a. In this embodiment, first group subpixel 20 a alsocomprises a wavelength-converting layer 80 b and first group subpixel 30a does not have a wavelength-converting layer. A transparent conductivelayer 90 is electrically connected to substantially all of one surfaceof one side of the LEDs of the subpixels. First group subpixels 10 a, 20a, and 30 a may each emit a different primary color of light, forexample, red, green, and blue, respectively. First group control circuit40 comprises transistors 42 and 44, and a capacitor 46S. In thisembodiment transistors 42 and 44 comprise single crystal semiconductor.Capacitor 46S is a stack capacitor. A stack capacitor has its largestdimension S1 in the Z direction. Second group subpixels 10 b, 20 b, and30 b have the same cross-sectional schematic as first group subpixels 10a, 20 a, and 30 a. Summarizing, FIGS. 1A and 1B show pixel 6 comprisinga plurality of data lines 60 wherein each data line is coupled to a datacircuit (not shown), a plurality of select lines 70 wherein each selectline is coupled to a select circuit (not shown), a plurality of firstgroup subpixels 10 a, 20 a, and 30 a, and a plurality of second groupsubpixels 10 b, 20 b, and 30 b. First group subpixel 10 a comprisesfirst group LED 22, first group control circuit 40 coupled to LED 22,and first group antifuse 50 disposed between select line 60 and firstgroup control circuit 40. Second group subpixel 10 b comprises a secondgroup LED, a second group control circuit coupled to the second groupLED, and a second group antifuse disposed between a select line and thesecond group control circuit.

FIG. 2 is another embodiment of first group subpixels 10 a, 20 a, and 30a of pixel 6. In the embodiment shown in FIG. 2, the transistors 47 and49 of control circuit 40 are thin film transistors. Thin filmtransistors comprise amorphous or polycrystalline semiconductor. Theembodiment shown in FIG. 2 shows gate-first transistors, but otherembodiments of the invention could employ gate-last transistors. Thecapacitor 46P is a planar capacitor. Planar capacitor 46P has itslargest dimension P1 in the X or Y direction. First group antifuse 50 isdisposed between first group control circuit 40 and a data line 70. Dataline 70 is a conductive interconnect that is coupled to a data circuit(not shown). Select line 60 is a conductive interconnect that is coupledto a select circuit (not shown). Select line 60 is coupled to transistor47 through an interconnect not visible in the cross-section schematic ofFIG. 2. Summarizing, FIGS. 1A and 2 show pixel 6 comprising a pluralityof data lines 70 wherein each data line is coupled to a data circuit(not shown), a plurality of select lines 60 wherein each select line iscouple to a select circuit (not shown), a plurality of first groupsubpixels 10 a, 20 a, and 30 a, and a plurality of second groupsubpixels 10 b, 20 b, and 30 b. First group subpixel 10 a comprisesfirst group LED 22, first group control circuit 40 coupled to LED 22,and first group antifuse 50 disposed between data line 70 and firstgroup control circuit 40. Second group subpixel 10 b comprises secondgroup LED 22, second group control circuit 40 coupled to second groupLED 22, and second group antifuse 50 disposed between data line 70 andsecond group control circuit 40.

Turning to FIG. 3, another embodiment of the device is shown incross-section. In this embodiment, both sides of the LEDs of eachsubpixel are coupled to a metal pad and LED vertical interconnects 92and 270, with one side coupled to a ground (not shown) and one sidecoupled to control circuit 40. LED 22 has ohmic contacts 230 on eitherside of the LED. In this example, LED contact 230 makes contact withonly a small portion of the surface area of either side of the LED. Inthe embodiments shown in FIGS. 1b and 2, transparent conductive layer 90makes contact to substantially all of the surface area of one side ofLED 22. In this embodiment, first group antifuse 50 is disposed betweenfirst group control circuit 40 and a power line 72. Summarizing, FIGS.1A and 3 show pixel 6 comprising a plurality of data lines 60 whereineach data line is coupled to a data circuit (not shown), a plurality ofselect lines 70 wherein each select line is couple to a select circuit(not shown), a plurality of first group subpixels 10 a, 20 a, and 30 a,and a plurality of second group subpixels 10 b, 20 b, and 30 b. Forexample, first group subpixel 10 a comprises first group LED 22, firstgroup control circuit 40 coupled to LED 22, and first group antifuse 50disposed between power line 72 and first group control circuit 40.Second group subpixel 10 b comprises a second group LED 22, second groupcontrol circuit 40 coupled to second group LED 22, and second groupantifuse 50 disposed between power line 72 and second group controlcircuit 40.

II Methods to Test Subpixels and Program Antifuses of Selected Subpixels

FIG. 4A is a circuit diagram of first group subpixel 10 a according toone embodiment of the present invention. It is important to note thatthe description of a second group subpixel would be similar to a firstgroup subpixel. In this embodiment, first group subpixel 10 a comprisesa first group LED 22, a first group control circuit 40, and a firstgroup antifuse 50. First group control circuit 40 modulates the lightoutput of first group LED 22. First group antifuse 22 renders firstgroup control circuit 40 nonfunctional when it is unprogrammed. Whensufficient voltage is applied to program first group antifuse 50, firstgroup control circuit 40 becomes functional. First group control circuit40 is known as a 2T1C circuit, as it has two transistors and onecapacitor. One transistor in first group control circuit 40, known asthe drive transistor 44, controls the brightness of first group subpixel10 a. The source or drain of drive transistor 44 is connected to anelectrode of first group LED 22. The other transistor in first groupcontrol circuit 40, known as the select transistor 42, has its source ordrain connected to data line 70, its gate connected to select line 60with antifuse 50 disposed between transistor 42 and select line 60. Whenselect transistor 42 is turned on by select line 60, the voltage istransferred to the to the gate of drive transistor 44 through selecttransistor 42 and stored in capacitor 46. Drive transistor 44 convertsthe voltage to current that is provided to LED 22. The circuit diagramof FIG. 4A represents the cross-sectional schematic of FIG. 1B, wherefirst group antifuse 50 is disposed between control circuit 40 andselect line 60.

It is to be appreciated that an unprogrammed first group antifuse 50renders first group subpixel 10 a nonfunctional. Only after first groupantifuse 50 is programmed is first group subpixel 10 a functional. Firstgroup antifuse 50 is programmed by receiving a high voltage pulsethrough select line 60. In general, the voltage necessary to program thefirst group antifuse will be substantially higher than the standardoperating voltage of the first group control circuit. In one example,the operating voltage of control circuit 40 may about 4 volts, while theprogramming pulse necessary to program antifuse 50 is about 14 volts. Inthis manner, a first group subpixel with an unprogrammed first groupantifuse will not have the first group antifuse programmed by a standardselect or data signal used for image transmission. Rather, the firstgroup antifuse is only programmed by a higher voltage specifically usedonly for programming the first group antifuse.

Although first group antifuse 50 in FIG. 4A is in the current pathbetween data line 70 and first group control circuit 40, which is alsoshown in cross-section in FIG. 1B, other configurations are possible.Another embodiment is shown in FIG. 4B, where first group subpixel 10 ahas first group antifuse 50 disposed between data line 70 and firstgroup control circuit 40, which is also shown in cross-section in FIG.2. Again, first group subpixel 10 a is nonfunctional while first groupantifuse 50 is unprogrammed, and functional when first group antifuse 50has been programmed. The voltage pulse to program antifuse 50 isdelivered through data line 70.

Another embodiment is shown in FIG. 4C, where first group subpixel 10 ahas first group antifuse 50 disposed between power line 72 and firstgroup control circuit 40, which is also shown in cross-section in FIG.3. Again, first group subpixel 10 a is nonfunctional while first groupantifuse 50 is unprogrammed, and functional when first group antifuse 50has been programmed. The voltage pulse to program antifuse 50 isdelivered through power line 72.

Any suitable control circuit configuration may be used, and the 2T1Ccontrol circuit is just one example. Another example of a controlcircuit for an LED uses four transistors and two capacitors.

One or more subpixels can form a pixel. FIG. 5A is a circuit diagram ofpixel 6 shown in plan view schematic in FIG. 1A. Pixel 6 comprises firstgroup subpixels 10 a, 20 a, 30 a, second group subpixels 10 b, 20 b, and30 b, data lines 70, select lines 60, and power lines 72. In thisexample, for each first group subpixel there is one second groupsubpixel. The second group of subpixels is redundant to the first groupof subpixels. Throughout this application, reference to first groupsubpixels refers to the initial group of subpixels which are selected tocomprise the pixel or display, while the second group of subpixels willrefer to redundant subpixels that can replace a defective first groupsubpixel. Functional second group subpixels can also replace defectsecond group subpixels. For example, subpixel 10 b in the second groupis redundant to subpixel 10 a in the first group. Each redundantsubpixel emits light of the same color as the subpixel that it isredundant to. The light emitted by the subpixel and indicated in theFIG. 5A is not the same as the light emitted by the LED if the subpixelhas a wavelength-converting layer. For example, a subpixel may have anLED that emits blue light that is converted to red light by awavelength-converting layer. A redundant subpixel will replace asubpixel that is determined to be defective by testing.

At a stage of fabrication (fabrication will be discussed in detail inSection III) before pixel 6 is complete, all of the antifuses in pixel 6are unprogrammed (as shown by the open circuit antifuses), and thereforeall of the subpixels are nonfunctional. At this stage of fabrication, nowavelength-converted layers have been added to the partially completedpixel. The LEDs in the subpixels are first tested for functionality byphotoluminescence. FIG. 5B shows a plan view schematic of pixel 6 shownin the circuit diagram of FIG. 5A. A light source such as a laser (notshown) is directed at the LEDs of the pixel, inducing the LEDs to emitlight by photoluminescence. The light source may have all suitablewavelengths to induce all the LEDs to emit light. In other embodiments,the light source may have a wavelength or wavelengths suitable to induceonly a fraction of the LEDs to induce light. A line scan camera (notshown) then records the light output of each LED by following theracetrack-like path indicated in FIG. 5B. A recording of the lightemission information for each subpixel is stored on a computer. If thelight source induces emission in only a fraction of the subpixels, thenmultiple passes of a light source with different dominant wavelengthsmay be needed to induce all the subpixels to emit light.

If the LEDs of first group subpixels 10 a, 20 a, and 30 a are determinedto be functional by photoluminescent testing, then the antifuses ofthese subpixels are programmed, coupling each subpixel to a selectcircuit. Programming the antifuse involves a pulse of electricity withsufficient voltage to rupture the dielectric layer in the antifuse(antifuse construction will be discussed in detail in section III). Theinformation on LED functionality from photoluminescent testing is usedto determine which subpixels should have their respective antifuseprogrammed. Each programmed antifuse electrically connects the controlcircuit of a subpixel to an external device. If the LED of any of thefirst group subpixels 10 a, 20 a, or 30 a is determined not to befunctional by photoluminescence, the antifuse of that first subpixel isnot programmed. The antifuse of the redundant second group subpixel tothe defective first group subpixel is then programmed.

In one example, subpixels 10 a, 30 a, 10 b, 20 b, and 30 b of pixel 6shown in FIG. 5A were determined to have LEDs with functional lightoutput by photoluminescent testing, while subpixel 20 a was determinedto have a defective LED and is therefore nonfunctional. Accordingly, theantifuses of first group subpixels 10 a and 20 a and second groupsubpixel 20 b were programmed (as shown by the closed circuit in thecircuit diagram), while the antifuses of first group subpixel 20 a andsecond group subpixels 10 b and 30 b were not programmed, as shown inFIG. 5C.

LEDs may be defective for a variety of reasons. The LED may be cracked,there may be crystallographic defects such as line dislocations, theremay be shorting between conductive layers of the LED, or there may becontamination in the LED. Each of these defects may render the LEDunable to produce light of sufficient intensity or wavelength to befunctional.

After the subpixels have been tested by photoluminescent emission andappropriate antifuses programmed to connect the subpixels to the selectlines, the subpixels may be tested a second time. The second test mayoccur after a wavelength-converting layer has been added to thesubpixel, as will be discussed in section III. In this second test,appropriate voltages and currents are applied to the data lines, selectlines, and power lines of the selected subpixel, causing the controlcircuit to admit current to the LED, causing the LED to emit light byelectroluminescence. Only those subpixels with a programmed antifusewill have the data line electrically connected to a subpixel andtherefore be able to emit light. A line scan camera again records thelight output of each LED and a registry of the information is stored ona computer. In the preceding example shown in FIG. 5C, the LED ofsubpixel 20 a was determined to be defective while the LEDs of subpixels10 a, 30 a, 10 b, 20 b, and 30 b were determined to be functional byphotoluminescence. After programming antifuses to subpixels 10 a, 20 b,and 30 a, the subpixels were tested a second time, this time byelectroluminescence. In one example, first group subpixel 10 a andsecond group subpixel 20 b were determined to be functional and firstgroup subpixel 30 a was defective by electroluminescent testing. Theantifuse of second group subpixel 30 b is then programmed, and secondgroup subpixel 30 b replaces defective first group subpixel 30 a, asshown in FIG. 5D. Finally in this example, pixel 6 would comprisefunctional subpixels 10 a, 20 b, and 30 b. While first group subpixel 30a has a programmed antifuse, the subpixel is defective, as wasdetermined by electroluminescent testing, and does not emit light.Second group subpixel 30 b has replaced first group subpixel 30 a.

In the example above, the antifuse was disposed between the controlcircuit and a select line of the subpixel. In other embodiments wherethe antifuse is disposed between the control circuit and a data line, orbetween the control circuit and a power line, similar methods of testingand programming would apply.

It is important to distinguish the two kinds of light testing:photoluminescent and electroluminescent. In photoluminescent testing,the LED of each subpixel is tested before the subpixel is connected toprogramming circuitry, and the functionality of only the LED isdetermined by stimulating light emission from another light source. Inelectroluminescent testing, the entire subpixel including the LED andcontrol circuit is tested for functionality by operating the subpixelwith electrical current. In electroluminescent testing, other defects,such as a poor contact to the LED, a broken interconnect, or a defectivetransistor may render the subpixel defective despite having a programmedantifuse. So electroluminescent testing may expose other defects, suchas those related to the control circuit or interconnects in addition toLED-related defects, while photoluminescent testing determines onlyLED-related defects. Also, electroluminescent testing can be done afterwavelength-converting layers are fabricated, while photoluminescenttesting is done before wavelength-converting layers are fabricated.

In another embodiment, the subpixel may be tested by photoluminescenttesting-only, and not by electroluminescent testing. In yet anotherembodiment, the subpixel may be tested by electroluminescenttesting-only, and not by photoluminescent testing. If the subpixel istested by electroluminescent testing-only, the antifuses of the firstgroup subpixels are programmed before electroluminescent testing.Replacement of defective first group subpixels with functional secondgroup subpixels then proceeds as described above. Electroluminescenttesting requires the antifuse to be programmed.

In other embodiments, the pixel may comprise more than one primarysubpixel per color. For example, as shown in FIG. 5E, pixel 7 has firstgroup subpixels 10 a, 20 a, 30 a, and 32 a, and second group subpixels10 b, 20 b, 30 b, and 32 b. Subpixels 10 a and 10 b emit red light,subpixels 20 a, 30 a, 20 b, and 30 b emit green light, and subpixels 32a and 32 b emit blue light. Varying numbers of subpixels per primarycolor can allow light intensity to be balanced in the finished pixel. Instill other embodiments, there may be more than one redundant secondgroup subpixel per first group subpixel. For example, as shown in FIG.5F, pixel 8 comprises first group subpixels 10 a, 20 a, and 30 a, andsecond group subpixels 10 b, 20 b, 30 b, 10 c, 20 c, and 30 c. In thisexample, there are two redundant second group subpixels for each firstgroup subpixel. With multiple redundant second group subpixels, if aredundant second group subpixel is found to be defective by testing, itcan be replaced with another redundant second group subpixel.

A plurality of pixels can be incorporated into a two dimensional arrayto form a display. FIG. 6 is a top view of a display 104 according to anembodiment of the present invention. Display 104 comprises a pixel arrayarea 110 which includes a plurality of subpixels including redundantsubpixels, and data circuits 120 and scan circuits 130 that connect tothe pixel array area 110. The subpixels in pixel array area 110 arearranged in a two dimensional array, and the subpixels comprise anantifuse. Ground tie lines 140 and power lines 150 also connect to pixelarray area 110. Similar to the description above for a single pixel, thearray of pixels can be tested by photoluminescence andelectroluminescence, and the appropriate subpixels can have theirantifuses programmed. Summarizing, an embodiment of a display panelcomprises a plurality of data circuits, a plurality of select circuits,and a plurality of subpixels arranged in a two dimensional array. Eachsubpixel has an LED, a control circuit coupled to the LED, and anantifuse disposed between the control circuit and either a data circuitor a select circuit.

The display may incorporate hundreds, thousands, or millions of pixels.It is important to note that the completed display in the embodimentsdescribed operates in a manner similar to a conventional active matrixdisplay. In an embodiment of a completed display of the presentinvention, the two dimensional array of subpixels receives select, data,and power signals to operate individual subpixels. Subpixels withunprogrammed antifuses will be electrically isolated from displayoperation. As described earlier, it is possible in an embodiment thatthe displays can have defective subpixels with programmed antifuses. Soeven the though the defective subpixels receive current through theprogrammed antifuse, they may not produce light. A redundant functionalsecond group subpixel can replace a defective subpixel with a programmedantifuse.

III Methods to Fabricate a Pixel or Display

An embodiment of methods to fabricate a pixel or display will now bediscussed in detail in sections III A-D. LEDs and their fabrication willbe described in subsection III A. LED fabrication will occur on an LEDsubstrate, although the LED substrate will be removed in a subsequentstep. The LEDs, LED substrate, and associated elements such aspassivating dielectric layers, LED vertical interconnects, and a bondpad layer will collectively be called the LED apparatus. The controlcircuit comprising the transistors and capacitors and the antifuse willbe described in subsection III B and collectively will be called thecontrol circuit+antifuse apparatus. A bonding process will join the LEDapparatus with the control circuit+antifuse apparatus, as described insubsection III C. Next, through substrate interconnects extending fromconductive regions of the transistor substrate and fabrication methodswill be described in subsection III D. The bonding of the combined LEDand control circuit+antifuse apparatus to a backboard will be describedin subsection III E. Finally, the formation of wavelength-convertinglayers will be described in section III F. Other embodiment, that, forexample, do not use single crystal semiconductor transistors but ratherthin film transistors are possible. Methods to form thin filmtransistors are well known to those skilled in the art and will not bediscussed.

When reference is made herein to a method comprising two or more definedsteps, the defined steps can be carried out in any order orsimultaneously (except where context or specific instruction excludesthat possibility), and the method can include one or more other stepscarried out before any of the defined steps, between two of the definedsteps, and/or after all the defined steps (except where context excludesthat possibility). The fabrication processes described herein do notform a complete process flow, with the remainder of the process flowknown to those of ordinary skill in the art. Only the methods andstructures necessary to understand embodiments of the present inventionare described herein.

III A. LED Apparatus Formation

One embodiment of the LED apparatus and fabrication is now described. Itis to be understood that fabrication of many LED apparatus is occurringsimultaneously on the same LED substrate, although only one is shown.Turning to FIG. 7A, LED 22 is formed on an LED substrate 210. LED 22comprises a first conductive layer 204 disposed on surface 212 of LEDsubstrate 210, an active layer 206 disposed on first conductive layer204, and a second conductive layer 208 disposed on active layer 206.Surface 212 is one surface of LED substrate 210, which has anothersubstantially parallel surface 222. A masking layer (not shown) mayformed on second conductive layer 208 and portions of layers 204, 206,and 208 removed by etching. The masking layer is then removed. Thelayers 204, 206, and 208 of LED 22 may have a rectangular shape, withlonger dimensions in the X and Y directions than in the Z direction(thickness). An LED contact 230 is disposed on a portion of secondconductive layer 208. In this embodiment, each of layers 204, 206, and208 are in immediate contact with the layer below it, with nointervening layers.

First conductive layer 204, second conductive layer 208, and activelayer 206 may be any suitable semiconductor layer known to those skilledin the art, including but not limited to gallium nitride, indium galliumnitride, indium arsenide, aluminum gallium arsenide, gallium arsenide,gallium phosphide, gallium arsenide phosphide, aluminum indium galliumphosphide, gallium arsenide nitride, aluminum indium arsenide, aluminumantimonide, indium phosphide, indium antimonide, or indium galliumarsenide phosphide. First and second conductive layers 204 and 208 maybe gallium nitride doped to opposite polarity of one another, forexample, n-type and p-type or vice versa. Active layer 206 may befabricated of any standard semiconductor materials, for example indiumgallium nitride, in any formation, for example single quantum well,multiple quantum wells, or double heterostructure. In other embodiments,there may be so-called current blocking layers (not shown) above and/orbelow active layer 206 (i.e. the active layer 206 may be deposited on acurrent blocking layer, and a current blocking layer may be deposited onactive layer 206). The principles and mechanisms of the conductive andactive layers are well known to those skilled in the art. Any suitablemethod may be used to deposit LED semiconducting materials, includingbut not limited to metal organic chemical vapor deposition (MOCVD),hydride vapor phase epitaxy, molecular beam epitaxy, most preferablyMOCVD.

LED substrate 210 may be any suitable single crystal semiconductor,although any suitable substrate material may be used, including but notlimited to sapphire, silicon carbide, gallium nitride, zinc oxide, andsilicon. LED substrate 210 comprises single crystal material which issubstantially crystal lattice matched with first conductive layer 204.Substantially crystal lattice matched is to mean the mismatch betweenthe two crystal lattices is less than about 25%. For example, galliumnitride and sapphire are substantially crystal lattice matched, with alattice mismatch of 16%.

LED contact 230 may be any suitable material to make an ohmic contact toconductive layer 208, including but not limited to indium tin oxide(ITO), aluminum zinc oxide (AZO), fluorine-doped tin oxide (FTO),aluminum, silver, nickel, or a stack of a nickel layer followed by agold layer. LED contact 230 may be deposited by any suitable technique,such as evaporation, CVD, or sputtering, most preferably evaporation.LED contact 230 may have been formed by etching a larger layer with amasking layer disposed on it (not shown), or by a lift-off technique.The masking layer is removed (not shown).

Turning to FIG. 7B, a first dielectric layer 240 is disposed on LED 22and LED substrate 210, as shown in cross-section. First dielectric layer240 may be any suitable material, including but not limited to siliconoxide, aluminum oxide, titanium oxide, silicon nitride, or combinationsthereof, most preferably silicon oxide. First dielectric layer 240 issubstantially transparent to light of the wavelength emitted by activelayer 206. Substantially transparent is to mean at least 70% of thelight is transmitted through the layer. First dielectric layer 240 canbe deposited by any suitable technique, such as evaporation, sputtering,CVD, or spin-on techniques, most preferably by CVD. After deposition,first dielectric layer 240 may be planarized. Planarization is theprocess by which top surface 242 of first dielectric layer 240 isrendered substantially parallel to surface 212 of LED substrate 210.Planarization may be accomplished by any suitable technique, includingbut not limited to chemical mechanical planarization (CMP), wet chemicaletch, or plasma etch in corrosive gas, most preferably by CMP.Subsequent steps in fabrication will be described assuming that firstdielectric layer 240 of FIG. 7B has been planarized. It is to beunderstood that the fabrication could proceed without this planarizingstep.

A reflector layer 250 is deposited on surface 242 of first dielectriclayer 240. Reflector layer 250 will direct more of the light emitted byLED 22 towards the viewer in the finished pixel. In a later step, thestructure shown in FIG. 7B will be inverted in the completed device.Reflector layer 250 may comprise any suitable material thatsubstantially reflects visible light of the wavelength emitted by activelayer 206 including but not limited to aluminum, gold, or silver, alloysof aluminum, gold, or silver, a composite material such as a polymermixed with metal oxide particles, combinations thereof, or a distributedBragg reflector (DBR), most preferably a DBR. A DBR includes one or morepairs of dielectric layers (not shown). Each dielectric layer in a pairhas a different index of refraction. The dielectric layers of the DBRmay be deposited by any suitable method, including evaporation,sputtering, CVD, or ALD, most preferably by evaporation. The thicknessof each dielectric layer in the DBR is designed to be about one quarterof the wavelength of light that is to be reflected. The wavelength oflight varies with the index of refraction of each material. For example,for an active layer of an LED that emits blue light with a wavelengthfrom 440 to 460 nm, a suitably reflective DBR would be comprised of oneto ten, most preferably five, pairs of aluminum oxide (index ofrefraction is 1.5 to 1.7) and titanium oxide (index of refraction is 2.3to 2.7) layers, where the aluminum oxide layer is 67±7 nm thick and thetitanium oxide layer is 49±5 nm thick. A reflector layer 250 that is aDBR may comprise silicon oxide, silicon nitride, aluminum oxide,tantalum oxide, or titanium oxide, or any other suitable dielectricmaterials. In other embodiments, a reflector layer is not deposited onfirst dielectric layer 240. Subsequent steps in the fabrication will bedescribed assuming the reflector layer 250 exists. While reflector layer250 is shown as a continuous layer in FIG. 7B, it is to be understoodthat the reflector layer 250 may not be continuous in all embodiments,and there may be multiple reflector layers in other embodiments. Asecond dielectric layer 260 is deposited on reflector layer 250. Seconddielectric layer 260 may be any suitable material, including but notlimited to silicon oxide, aluminum oxide, titanium oxide, siliconnitride, or combinations thereof, most preferably silicon oxide. Seconddielectric layer 260 can be deposited by any suitable means, such asevaporation, sputtering, CVD, or spin-on techniques, most preferably byCVD. The thickness of second dielectric layer 260 may be between 0.05and 10 microns, most preferably about 0.2 microns.

Next, an LED vertical interconnect is formed. Turning to FIG. 7C, amasking layer such as photoresist (not shown) is applied and patterned,and portions of layers 260, 250, and 240 are removed by etching inspecific locations. At least a portion of LED contact 230 is exposedafter this etch is complete. The etching may be accomplished by anysuitable etchant, such as corrosive gases like CHF₃, SF₆, HBr, or wetchemical acid, such as hydrofluoric acid (HF), nitric acid (HNO₃), orsulfuric acid (H₂SO₄), most preferably by corrosive gas. The maskinglayer is then removed, leaving a cavity. LED vertical interconnect 270is then formed in the cavity. LED vertical interconnect 270 may bedeposited by any suitable technique, including but not limited toevaporation, CVD, sputtering, solution deposition, or spray pyrolysis,most preferably CVD. LED vertical interconnect 270 may comprise anysuitable material which is conductive, including but not limited to ITO,AZO, FTO, or a conductive polymer such asPoly(3,4-ethylenedioxythiophene, or PEDOT), titanium, titanium nitride,tungsten, tantalum, tantalum nitride, copper, or aluminum. Portions ofLED vertical interconnect 270 that are deposited on surface 262 ofsecond dielectric layer 260 may be removed by any suitable technique,including but not limited to CMP, wet chemical etch, or plasma etch incorrosive gas, most preferably by CMP. In one embodiment, LED verticalinterconnect 270 is cylinder-shaped, with the diameter of the cylinderin contact with LED contact 230, although any suitable shape may beused. In one example, the diameter of LED vertical interconnect 270 is0.8 microns, although any suitable size may be used. LED verticalinterconnect 270 forms a substantially ohmic contact to LED contact 230.

Turning to FIG. 7D, a third dielectric layer 280 is deposited on seconddielectric layer 260. Third dielectric layer 280 may be any suitablematerial, such as silicon oxide, aluminum oxide, titanium oxide, siliconnitride, or combinations thereof, most preferably silicon oxide. Thirddielectric layer 280 can be deposited by any suitable means, such asevaporation, sputtering, CVD, or spin-on techniques, most preferably byCVD. The thickness of third dielectric layer 280 may be between 0.05 and10 microns. Next, a masking layer such as photoresist (not shown) isapplied and patterned, and at least a portion of third dielectric layer280 is removed by etching in specific locations, leaving a cavity. Atleast a portion of LED vertical interconnect 270 is exposed after thisetch is complete. The etching may be accomplished by any suitableetchant, such as corrosive gases like CHF₃, SF₆, HBr, or wet chemicalacid, such as hydrofluoric acid (HF), nitric acid (HNO₃), or sulfuricacid (H₂SO₄), most preferably by corrosive gas. The masking layer (notshown) is then removed. Conductive material is then deposited in thecavity created in third dielectric layer 280. After deposition, theconductive material on surface 282 of third dielectric layer 280 may beremoved by any suitable technique, including but not limited to CMP, wetchemical etch, plasma etch in corrosive gas, most preferably by CMP,leaving a bond pad 290 comprising the conductive material in the cavityof third dielectric layer 280. The conductive material for bond pad 290may be deposited by any suitable technique, including but not limited toevaporation, CVD, sputtering, solution deposition, electrodeposition, orspray pyrolysis. Bond pad 290 may comprise titanium, titanium nitride,tungsten, tantalum, tantalum nitride, copper, or aluminum, orcombinations thereof. In one embodiment, bond pad 290 comprises layersof titanium, tantalum nitride, and copper. Bond pad 290 forms asubstantially ohmic contact to LED vertical interconnect 270. Thirddielectric layer 280 and bond pad 290 are known as a bond pad layer.Bond pad layers are used throughout this application, and will followthe same basic fabrication sequence described above. The fabrication ofLED apparatus 295 as shown in FIG. 7D is now substantially complete.

III B. Control Circuit+Antifuse Apparatus Formation

Control circuit+antifuse apparatus formation is now described. It is tobe understood that fabrication of many more control circuits andantifuses than is shown may be occurring simultaneously. In thefollowing example, the control circuit will comprise two transistors andone capacitor. Transistor fabrication is first discussed. It is to beunderstood that any suitable transistor may be used, including but notlimited to field effect transistors or bipolar transistors. Thetransistors may comprise any suitable material, including but notlimited to single crystal, polycrystalline, or amorphous semiconductor.By using single crystal semiconductor for the channel of the transistor,a higher carrier mobility is obtained compared to thin film transistorswhich comprise amorphous or polycrystalline semiconductor. Turning toFIG. 8A, a transistor 42 is fabricated in transistor substrate 300. Astransistor fabrication is well known to those skilled in the art, notall detailed steps will be discussed but instead are summarized. In thisembodiment, transistor 42 comprises single crystal semiconductor.Although one transistor is shown to illustrate the process in detail inFIG. 8A, subsequent figures will show multiple transistors. Transistorsubstrate 300 may be any suitable single crystal semiconductor material,including but not limited to single crystal silicon, single crystalgermanium, single crystal gallium arsenide, or single crystal galliumnitride, most preferably single crystal silicon. Transistor substrate300 may comprise an etch-stop layer (not shown). The bottom surface 302of the transistor substrate 300 is referred to as the initial bottomsurface, because, in a later step, a portion of transistor substrate 300including the initial bottom surface 302 will be removed, resulting in adifferent bottom surface. The etch-stop layer (not shown) may be anysuitable material that has a substantially slower etch rate thantransistor substrate 300. In one embodiment, the etch-stop layer may besilicon oxide, as provided by silicon-on-insulator (SOI) technology. Inanother embodiment, the etch-stop layer may be boron-doped silicon. Aboron-doped silicon layer may be deposited as part of a thickerepitaxial layer deposition on a single crystal silicon wafer thatcomprises undoped silicon layers. The purpose of the etch-stop layerwill be discussed later.

Conductive regions 310 are formed in top surface 306 of transistorsubstrate 300. One method to form conductive regions 310 is by doping aportion of transistor substrate 300 to be either p-type or n-type. Itmay be doped by any suitable technique, for example, by applying amasking layer (not shown), patterning, and then implanting ions. Themasking layer is then removed. An anneal may activate the implantedions. Conductive regions 310 are more conductive than the surroundingsilicon substrate 300.

Conductive regions 310 may further comprise a silicide layer 320.Silicide layer 320 may be formed in conductive regions 310 to furtherdecrease the resistance, form ohmic contacts, and/or form an etch-stoplayer for subsequent steps. Silicide layer 320 is formed by depositionof a metal on transistor substrate 300. If transistor substrate 300 issilicon, the metal may include but not be limited to titanium, cobalt,nickel, or tungsten, and then annealing at elevated temperature (above400° C.) to react the metal with silicon to form a silicide film, forexample, titanium silicide, cobalt silicide, nickel silicide, ortungsten silicide. A wet etch (not shown) may remove unreacted metalfrom the apparatus. In other embodiments, a silicide layer is not a partof conductive regions 310.

In some embodiments, conductive regions 310 may be isolated from oneanother electrically by dielectric regions 330 formed in top surface 306of transistor substrate 300. Dielectric regions 330 may be formed byshallow trench isolation (STI), field oxidation (FOX), or any othersuitable dielectric region formation technique.

Transistor 42 comprises conductive regions 310 a and 310 b, which may beeither a source or drain, a dielectric gate layer 342, a conductive gatelayer 344, and a portion of transistor substrate 300 between conductiveregions 310 a and 310 b which is the channel. Dielectric gate layer 342may comprise silicon oxide, silicon nitride, aluminum oxide, hafniumsilicon oxide nitride, hafnium silicon oxide, combinations therein, orany other suitable material. The thickness of dielectric gate layer 342may be between 0.001 and 0.5 microns thick, for example about 0.02microns. Conductive gate layer 344 may comprise any suitable material,including but not limited to conductive silicon, titanium nitride,tantalum, or tantalum nitride. Sidewall spacers 350 may exist on thesidewalls of conductive gate layer 344. Other elements of a singlecrystal transistor, such as lightly doped drains (LDD), are notdescribed or shown herein but are well known to those skilled in the artand may be incorporated in other embodiments.

FIG. 8B shows two transistors 42 and 44. These two transistors 42 and 44will be a portion of one 2T1C control circuit. Again, there may be manycontrol circuits on transistor substrate 300, but only one is shownhere. The materials and dimensions of these two transistors may be thesame or different from one another. After transistor fabrication, fourthdielectric layer 370 is deposited on transistors 42 and 44, dielectriclayers 330, and transistor substrate 300. Fourth dielectric layer 370may be any suitable material, including but not limited to siliconoxide, silicon nitride, or aluminum oxide, most preferably siliconoxide. Fourth dielectric layer 370 is deposited by any suitabletechnique, including evaporation, sputtering, spin on, or CVD, mostpreferably CVD. Fourth dielectric layer 370 may be any suitablethickness, for example between 0.1 and 2 microns. In one embodiment thethickness is 0.2 microns. Top surface 372 of fourth dielectric layer 370can be rendered substantially parallel to surface 306 of transistorsubstrate 300. Subsequent steps in fabrication will be describedassuming that top surface 372 of fourth dielectric layer 370 shown inFIG. 8B has been planarized. It is to be understood that the fabricationcould proceed without this planarizing step.

Transistor vertical interconnects are fabricated next. Transistorvertical interconnects 380 form ohmic contacts to some or all ofconductive regions 310 and conductive gate layers 344. Transistorvertical interconnects 380 may be fabricated by any suitable technique.One example of transistor vertical interconnect fabrication is todeposit a masking layer (not shown), pattern the masking layer, and etchportions of fourth dielectric layer 370, exposing at least a portion ofconductive regions 310 and conductive gate layers 344. The masking layeris then removed. Any suitable transistor vertical interconnect material,including but not limited to aluminum or tungsten, or a stack oftitanium, titanium nitride, and aluminum, or a stack of titanium,titanium nitride, and tungsten, is deposited into the cavities whereportions of fourth dielectric layer 370 were removed. The portions oftransistor vertical interconnect material deposited on surface 372 areremoved by any suitable technique such as etchback or CMP, leavingtransistor vertical interconnects 380 in the cavities of fourthdielectric layer 370.

Antifuse formation is now described. Turning to FIG. 8B, antifusedielectric layer 390, can be formed by depositing a dielectric layer ontransistor vertical interconnects 380 and fourth dielectric layer 370. Amasking layer (not shown) is deposited and patterned, and portions ofthe dielectric layer are etched, leaving antifuse dielectric layer 390in contact with transistor vertical interconnect 380. Antifusedielectric layer 390 may be any suitable material, including but notlimited to silicon oxide, silicon nitride, aluminum oxide, hafniumoxide, tantalum oxide, or combinations therein. The thickness ofdielectric antifuse layer 390 may be selected for an appropriateprogramming voltage. Thicker dielectric antifuse 390 layers will requiremore voltage to program than thinner layers for the same programmingtime is the same. In one example, a 3 nm-thick silicon oxide antifusedielectric layer may be programmed by about a 10V voltage pulse with aprogramming duration of less than 10 micro seconds. In otherembodiments, a programming voltage of 14 volts, 20 volts, or 30 volts ormore is required to program the antifuse. A short programming time isdesirable, as programming millions of antifuses would be prohibitivelycostly if the programming time is too long. As stated previously, ingeneral, it is desirable to select the programming voltage of theantifuse to be higher than the standard operating voltage of the controlcircuit. In this manner, unprogrammed antifuses will not be programmingduring standard operation of the pixels to display images.

Turning to FIG. 8C, a horizontal interconnect layer 406 is deposited onantifuse dielectric layer 390. Horizontal interconnect layer 406 mayformed by depositing a continuous layer, masking (not shown), andetching, to form the structure shown in FIG. 8C. Horizontal interconnectlayer 406 may comprise a metal, such as titanium, titanium nitride,tungsten, alumininum, or a doped semiconductor such as silicon.Horizontal interconnect layer 406, antifuse dielectric layer 390, andtransistor vertical interconnect 380 together form antifuse 50.Horizontal interconnect 406 is also connected to transistor verticalinterconnect 380. When antifuse 50 is programmed, antifuse dielectriclayer 390 is ruptured, and horizontal interconnect 406 and transistorvertical interconnect 380 are shorted together at the point of rupture.Horizontal interconnect layer 406 and transistor vertical interconnect380 are both conductive layers, so antifuse 50 comprises first andsecond conductive layers with antifuse dielectric layer 390 disposedbetween and in contact with the first and second conductive layers.There are also suitable antifuse constructions other than conductivelayer-dielectric layer-conductive layer. For example, an amorphoussilicon layer with metal layers on either side may be used as anantifuse. The amorphous silicon has a high resistivity in theunprogrammed state. A voltage pulse in this structure creates aconductive path connecting the two metal layers. Any suitable antifusemay be used.

Formation of the capacitor device of the control circuit is nextdescribed. As shown in FIG. 8C, stack capacitor 46S has a longestdimension S1 in the Z coordinate, substantially orthogonal to the topsurface 306 of transistor substrate 300. Any suitable capacitor form mayused, including but not limited to stack capacitors, trench capacitors,and planar capacitors. Stack capacitor 400S comprises two conductiveelectrode layers separated by a dielectric layer or layers. Otherdevices in the control circuit are coupled to the electrodes of stackcapacitor 400S. Some portions of the electrode layers which were used toform stack capacitor 400S may be used to form horizontal interconnectsbetween devices in a control circuit, such as horizontal interconnect406.

A fifth dielectric layer 410 is deposited on fourth dielectric layer 370and stack capacitor 400S. Fifth dielectric layer 410 may be any suitablematerial, for example silicon oxide, and may be deposited by anysuitable technique, including evaporation, sputtering, spin on, or CVD,most preferably CVD, and may be any suitable thickness, for example 2microns. Fifth dielectric layer 410 may be any suitable thickness, forexample between 0.1 and 5 microns. In one embodiment the thickness is 2microns. Top surface 412 of fifth dielectric layer 410 can be renderedsubstantially parallel to top surface 306 of transistor substrate 300.Subsequent steps in fabrication will be described assuming that surface412 of fifth dielectric layer 410 shown in FIG. 8C has been planarized.It is to be understood that the fabrication could proceed without thisplanarizing step.

Turning to FIG. 8D, transistor vertical interconnect 420 is formed infifth dielectric layer 420 and fourth dielectric layer 370 by techniquessimilar to those described earlier for transistor vertical interconnects380. A bond pad layer comprising a sixth dielectric layer 430 and a bondpad 440 is then formed on fourth dielectric layer 410. Bond pad layerformation has been previously described. Control circuit+antifuseapparatus 445 is now substantially complete.

III C. Bonding the Control Circuit+Antifuse Apparatus to the LEDApparatus

Turning to FIG. 9, LED apparatus 295 is flipped over and bonded tocontrol circuit+antifuse apparatus 445. The two bonded apparatus areshown in FIG. 10A in cross-section. The devices on each respectivesubstrate face one another, with transistor substrate 300 and LEDsubstrate 210 being the outermost surfaces of the bonded pair at thisstage in fabrication. Any suitable bonding technique may be used,including but not limited to hybrid bonding, thermocompression bonding,anodic bonding, plasma activated bonding, eutectic bonding, or surfaceactivated bonding. The bond formed between two structures may be:wafer-to-wafer, in which two wafers each with multiple die are bonded toone another; die-to-wafer, in which a die or dice are bonded to a wafer;or die-to-die, in which a die is bonded to another die. A wafer usuallycomprises multiple die. Hybrid wafer bonding or hybrid die bondingdescribes the joining of two surfaces, wherein at least one of the twosurfaces comprises at least two different materials. In one example ofhybrid bonding, the two surfaces are brought into contact under pressureand heated to achieve a bond of the two surfaces. In this embodiment,hybrid bonding is used. Electrical connections between the two apparatusare made at the points of contact between bond pads on the respectivesurfaces.

It is to be appreciated that LED apparatus 295 is not connected tocontrol circuit+antifuse apparatus 445 through wire bonds, which arecommon in the prior art. Wire bonds are interconnects that join twodevices by a wire that is mechanically placed and bonded to the twodevices using downward pressure and ultrasonic energy and/or heat. Thewires in wire bonds are typically 15 microns in diameter or larger andhave metal balls at either end that are larger than 15 microns indiameter. The dimensions of wire bonds are unsuitable for joining thetransistors and LEDs in these embodiments.

FIG. 10A shows a cross-section with 3 sets of devices that are partiallyfabricated group subpixels 10 a, 20 a, and 30 a. These 3 sets of deviceshave been bonded together in the same manner shown as the single set ofdevices in FIG. 9. Subpixel 10 a is described in detail, and it is to beunderstood that subpixels 20 a and 30 a are similar to subpixel 10 a atthis point in fabrication. After bonding, the two apparatus are coupledthrough the bond pads 440 and 290. LED 22 of subpixel 10 a is coupledwith control circuit 40. Reflector layer 250 is disposed between LED 22and transistor substrate 300.

III D. Through Substrate Interconnects

Until this point in the fabrication sequence, both LED substrate 210 andtransistor substrate 300 have remained fully intact, as shown in FIG.10A. Both LED substrate 210 and transistor substrate 300 may each bebetween 200 and 700 microns thick, although they may be any suitablethickness that allows for mechanical handling during fabrication. Thisthickness imparts mechanical stability to the respective substrates andallows the devices to be handled during fabrication. With two thicksubstrates bonded together, one of the two substrates can now be removedin whole or in part, and the structure will retain mechanical stabilityfor handling with one substrate intact.

Turning to FIG. 10B, a portion of transistor substrate 300 is nowremoved. Transistor substrate 300 in FIG. 10A has an original thicknessTS1. A portion of transistor substrate 300 can be removed by anysuitable wafer thinning technique, including but not limited to laserablation, mechanical polishing, or chemical etch. In one embodiment,mechanical polishing may be combined with chemical etch to remove athickness of the transistor substrate 300, with resultant transistorsubstrate thickness TS2 shown in FIG. 10B. Thickness TS2 issubstantially less than thickness TS1. Due to the scale of FIGS. 10A and10B, the thickness of transistor substrate 300 removed is not accuratelyshown. By combining mechanical polishing with chemical etching, a moreprecise thickness of transistor substrate 300 may be removed at lowercost and with greater precision in the remaining substrate thicknessthan if either technique was used alone. For example, mechanicalpolishing may first remove about 400 microns of an initial 500micron-thick dimension TS1 of transistor substrate 300, resulting in apost-polish transistor substrate thickness of about 100 microns. Forwafer thinning by polishing, the wafer is rotated about its center on asurface with abrasive media. Wafer thinning by mechanical force issometimes referred to as grinding when the remaining substrate surfaceis rough, and polishing when the remaining substrate surface is smooth.Either grinding or polishing, or a combination, may be used. Aftergrinding and/or polishing, a chemical etch may then remove about 95microns of the remaining 100 microns, leaving 5 microns (dimension TS2)of transistor substrate 300. Chemical etch of transistor substrate 300may be accomplished by any suitable chemistry. For example, KOH, TMAH,HF+HNO₃, or HF+NH₄F chemistries may be used to etch silicon substrates.An etch-stop layer in transistor substrate 300 (not shown) may act toslow or stop the rate of substrate grinding, polishing, or etching sothat the remaining thickness TS2 of transistor substrate 300 may bereliably determined. For example, if KOH is used to etch silicon, KOHwill etch undoped silicon about 20× faster than a heavily boron-dopedsilicon etch-stop layer. The boron-doped layer of silicon acts as anefficient etch-stop for silicon etching. If silicon oxide is used as theetch-stop layer, KOH will etch silicon about 500× faster than it willetch silicon oxide. The silicon oxide layer acts as an efficientetch-stop for silicon etching. Initial bottom surface 302 of transistorsubstrate 300 is removed.

Referring to FIG. 10B, after removal of a portion of transistorsubstrate 300, the remaining portion of transistor substrate 300designated by dimension TS2 remains and has a bottom surface 306. Thefinal thickness TS2 of transistor substrate 300 may be any suitabledimension from 0.1 to 100 microns, most preferably less than 20 microns.Reducing the value of TS2 to less than 20 microns facilitates formationof through substrate interconnects with small size.

By removing most of the original transistor substrate 300, throughsubstrate interconnects with small features can now be fabricated in theremaining transistor substrate 300. Through substrate interconnects 510are fabricated by first masking and etching cavities in transistorsubstrate 300. The cavities in transistor substrate 300 expose a portionof conductive regions 310. Portions of transistor substrate 300 may beetched by any suitable etchant, including corrosive gases or chemicalacids, most preferably by corrosive gases. The masking layer (not shown)is then removed. In one embodiment, after etching, a sidewall dielectriclayer 500 may be formed on the sidewalls of the cavities in transistorsubstrate 300. Sidewall dielectric layer 500 will insulate the sidewallsof the transistor substrate 300 from the subsequently formed throughsubstrate interconnects 510. Sidewall dielectric layer 500 may compriseany suitable material, including but not limited to silicon oxide orsilicon nitride, most preferably silicon oxide. Sidewall dielectriclayer 500 may be deposited by any technique with good step coverage,most preferably by CVD. Portions of sidewall dielectric layer 500 thatare deposited on conductive regions 310 can be removed by an anisotropicetch. This anisotropic etch will remove portions of sidewall dielectriclayer 500 that are on the surface of conductive region 310 while leavinga portion on the sidewalls of transistor substrate 300. This processallows the through substrate interconnect that follows to makeelectrical contact to the conductive regions 310 while being insulatedfrom transistor substrate 300. The remaining portions of sidewalldielectric layer 500 are shown in FIG. 10B. In other embodiments, asidewall dielectric layer is not needed on the sidewalls of the cavitiesin transistor substrate 300, for example when transistor substrate 300is not substantially conductive.

Through substrate interconnect material is deposited in the cavities oftransistor substrate 300. The through substrate interconnect materialmay comprise any suitable material, including but not limited toaluminum, copper, or tungsten, or a stack of titanium, titanium nitride,and aluminum layers, or a stack of titanium, titanium nitride, andtungsten layers, or a stack of titanium, tantalum nitride, and copperlayers. Any suitable method for through substrate interconnectdeposition may be used, such as evaporation, sputtering,electrodeposition, or CVD. Through substrate interconnect material onsurface 306 of transistor substrate 300 can be removed by etching orCMP, most preferably by CMP, leaving through substrate interconnects510. Through substrate interconnects 510 are electrically connected toconductive regions 310.

Turning to FIG. 10C, a bond pad layer is formed on surface 306 oftransistor substrate 300, resulting in bond pads 520 in seventhdielectric layer 530. Bond pads 520 are electrically connected tothrough substrate interconnects 510. LED substrate 210 remains on theapparatus at this point in fabrication to allow for mechanical handlingof the bonded apparatus.

III E. Bonding the Paired LED and Control Circuit+Antifuse Apparatus toa Backboard

Turning to FIG. 10D, the LED apparatus and control circuit+antifuseapparatus pair is bonded to the backboard 540. Backboard 540 comprises abackboard substrate 550 with a plurality of bond pads 560 and aplurality of backboard interconnects. The backboard interconnects maycomprise data lines 60, select lines 70, and power lines 72. Backboard540 may comprise a printed circuit board (PCB) or an interposer. Aninterposer may comprise a silicon oxide or silicon substrate, and willhave a smooth top surface 562 compared with the rougher top surface of aPCB. The surface roughness of surface 562 will be less than 0.2 micronsroot mean square for an interposer. The surface roughness of a PCB madeof, for example, FR-4, may exceed 5 microns root mean square. The smallsurface roughness of an interposer allows the patterning by lithographyof fine features less than 0.5 micron in size, such as the plurality ofbackboard interconnects. In one embodiment, backboard 540 may comprisean interposer, and backboard interconnects may be fabricated by adamascene process in silicon oxide. Backboard interconnects may comprisecopper or any suitable conductive material. In other embodiments,backboard interconnects may be fabricated as multiple layers separatedby dielectric layers and connected by vertical interconnects (notshown). In a different embodiment, backboard 540 may comprise a printedcircuit board (PCB) with the backboard substrate 550 comprising FR-4material and backboard interconnects comprising copper. An interposercan generally provide smaller feature sizes and pitches of backboardinterconnects compared with a PCB, and an interposer is preferred forthis reason. The interposer or PCB may comprise additional aspects (notshown), such as adhesive metal layers, micro bump connections, ball orstud bumps, or copper paste, or any suitable feature.

After bonding, data lines 70 and power lines 72 are electricallyconnected to control circuit 40. In this embodiment, antifuse 50electrically isolates control circuit 40 from select line 60 at thisstage of fabrication, as they antifuse has not yet been programmed. Anysuitable bonding technique may be used to join the backboard 540 tocontrol circuit 40, including but not limited to thermocompressionbonding, adhesive bonding, anodic bonding, plasma activated bonding,eutectic bonding, or surface activated bonding, most preferablythermocompression bonding. Other techniques may be used to bondbackboard 540 to the control circuit+antifuse apparatus that comprisescontrol circuit 40, including but not limited to ball or stud bumpingand copper pasting. The principles and mechanisms of these types ofbonding techniques are well known to those skilled in the art.

At this point in fabrication, subpixels 10 a, 20 a, and 30 a are coupledto data circuits (not shown) through data lines 70. Photoluminescenttesting and programming of some antifuses of the display may beaccomplished at this point, prior to addition of wavelength-convertinglayers (described below). In this manner, only the LEDs will be inducedto emit light.

III F. Formation of Wavelength-Converting Layer

Turning to FIG. 10E, backboard 540 can provide sufficient mechanicalstability to the structure such that LED substrate 210 shown in FIG. 10Dcan now be removed. LED substrate 210 may be removed by a laser process.If LED substrate 210 is sapphire, a KrF Excimer laser with an energydensity of 400 mJ/cm², a wavelength of 248 nm, and a pulse width of 38ns can irradiate the sapphire surface at an elevated temperature of 60°C. and remove the sapphire substrate from LED 200. LED substrate 210 maybe removed by chemical etching. If LED substrate 210 is GaAs, a solutionof NH₄OH:35H₂O or a solution of 5H₃PO₄:3H₂O₂:3H₂O can be applied toremove the GaAs substrate from the LEDs 200. If LED substrate 210 issilicon, a solution of KOH, TMAH, HF+HNO₃, or HF+NH₄F can be applied toremove LED substrate 210.

After LED substrate 210 is removed, a transparent conductive layer 90 isdeposited on LEDs 22 and first dielectric layer 240. Transparentconductive layer 90 may be any suitable material that is substantiallytransparent to visible light and is relatively conductive toelectricity, including but not limited to indium tin oxide (ITO),aluminum zinc oxide (AZO), fluorine-doped tin oxide (FTO), or a stack ofa thin nickel layer followed by a thin gold layer. Transparentconductive layer 90 may be deposited by any suitable technique, such asevaporation, CVD, or sputtering, most preferably evaporation. Aninterconnect (not shown), may connect transparent conductive layer 90 toa backboard interconnect. Transparent conductive layer 90 may bepatterned and etched (not shown). Transparent conductive layer 90couples to first conductive layer 204 of LED 22. Transparent conductivelayer 90 can be coupled to a ground circuit (not shown).

Wavelength-converting layer 80 a is deposited on transparent conductivelayer 90. Wavelength-converting layer 80 a overlies LED 22. In otherembodiments (not shown) a dielectric layer may be disposed betweentransparent conductive layer 90 and wavelength-converting layer 80 a.Wavelength-converting layer 80 a is excited by the light emitted by LED22 and emits light of a different wavelength than is emitted by LED 22.In a specific embodiment, wavelength-converting layer 80 a may comprisean organic material, for example silicone, epoxy, or polycarbonate,combined with inorganic phosphor particles such as GaAlN, with the GaAlNphosphor particles excited by light with a dominant wavelength ofbetween 420 and 470 nm (blue) and emitting light with a dominantwavelength of between 500 and 550 nm (red). In different embodiment, thephosphor particles may be CaAlSiN:Eu, with CaAlSiN:Eu phosphor particlesexcited by light with a dominant wavelength of between 420 and 470 nm(blue), and emitting light with a dominant wavelength of between 610 and730 nm (green). Any suitable phosphor particle may be used. In adifferent embodiment, silicone, epoxy, or polycarbonate may be combinedwith quantum dots, the quantum dots being nano-scale semiconductormaterial, for example group II-VI material having a compositionZnCdMgSe, CdSe, InP, or ZnS. In one embodiment, the composition of thequantum dots can be optimized to emit red (500 to 550 nm) or green (610to 730 nm) light when excited by blue light (420 to 470 nm). Anysuitable quantum dot composition may be used. In one embodiment,wavelength-converting layer 80 a may be screen printed into any suitablepattern.

In a different embodiment, wavelength-converting layer 80 a may bephosphor particles or quantum dots embedded in glass, a technique knownas phosphor-in-glass (PiG) or quantum dot-in-glass (QDiG). For example,glass paste combining SiO₂, B₂O₃, phosphor particles or quantum dots,adhesive, and organic solvent may be screen printed onto transparentconductive layer 580. The screen printing may be done with a stencilpattern or without patterning. Volatile organic components of the glasspaste may be removed by drying at 150° C. and sintering at 600° C. In adifferent embodiment, the PiG or QDiG layer may be deposited by aspin-on technique, in which chemicals and phosphor particles or quantumdots are suspended in organic solvents. The solution is spun ontotransparent conductive layer 90 as a film. The film is dried andannealed, which substantially removes the organic materials, leaving aglass film with phosphor particles or quantum dots. The glass film withphosphor particles or quantum dots is wavelength-converting layer 80 a.If the wavelength-converting layer 80 a was not initially patternedduring deposition, a masking layer (not shown) can be applied,patterned, and wavelength-converting layer 80 a etched to form apattern. Wavelength-converting layer 80 a may be etched by any suitableetchant, including but not limited to acids or corrosive gases. Themasking layer is removed.

In yet another embodiment, wavelength-converting layer 80 a may comprisemultiple quantum wells (MQWs). Quantum wells are two dimensional filmsof inorganic semiconductors, and comprise pairs of alternating films ofdifferent materials, for example, ZnCdSe/ZnSe, ZnCdSe/ZnCdMgSe,InGaN/GaN, AlGaNInP/GaNInP, or any suitable pairing. In one example,GaInN/GaN MQW films in wavelength-converting layer 590 a absorb lightwith a dominant wavelength from 420 to 470 nm (blue) from LED 200 andemit light with a dominant wavelength of 610 to 730 nm (green). Inanother example, AlGaNInP/GaNInP MQW films in wavelength-convertinglayer 80 a absorb light with a dominant wavelength from 420 to 470 nm(blue) from LED 200 a and emit light with a dominant wavelength of 500to 550 nm (red).

Wavelength converting layer 80 b is then fabricated. It may beadvantageous for wavelength converting layers 80 a and 80 b to be emitdifferent dominant wavelengths of light. For example, wavelengthconverting layer 80 a may emit red light and wavelength-converting layer80 b may emit green light. In one embodiment, the LEDs underlyingwavelength converting layers 80 a and 80 b emit light of the about samedominant wavelength. In other embodiments, the LEDs may emit light ofdifferent dominant wavelengths. In other embodiments (not shown),wavelength-converting layers 80 a and 80 b may be separated byintervening dielectric layers.

Turning to FIG. 10F, a passivating layer 600 is deposited onwavelength-converting layers and transparent conductive layer 90.Passivating layer 600 may comprise a transparent dielectric layer suchas silicon oxide or silicone, and serves as a barrier to mobile ionintrusion into the devices underneath. Fabrication of subpixels 10 a, 20a, and 30 a is now substantially complete. As other subpixels (notshown) can be fabricated simultaneously, pixel or display fabricationwould also be substantially complete. For example, fabrication ofsubpixels 10 b, 20 b, and 30 b shown in FIG. 1A would be completedsimultaneously with subpixels 10 a, 20 a, and 30 a, together formingpixel 6.

Summarizing, a method to make a pixel has the steps of providing abackboard, the backboard having a plurality of data circuits and selectcircuits. A plurality of control circuits and antifuses are formed on atransistor substrate, with each antifuse is coupled to a controlcircuit. A plurality of LEDs is formed on an LED substrate. The LEDs arebonded to the control circuits and the LEDs and control circuits arecoupled after bonding. The control circuits are then bonded to thebackboard. After this bonding, an antifuse is disposed between eachcontrol circuit and either a data circuit or a select circuit.

What is claimed is:
 1. A pixel comprising: a plurality of data lines,wherein each data line is coupled to a data circuit; a plurality ofselect lines, wherein each select line is coupled to a select circuit; aplurality of first group subpixels, wherein each first group subpixelcomprises at least one first group LED, a first group control circuitcoupled to the at least one first group LED, and a first group antifusedisposed between a select line and the first group control circuit; anda plurality of second group subpixels, wherein each second groupsubpixel comprises at least one second group LED, a second group controlcircuit coupled to the at least one second group LED, and a second groupantifuse disposed between a select line and the second group controlcircuit.
 2. The pixel of claim 1 wherein each first group antifuse andeach second group antifuse comprise a first conductive layer, a secondconductive layer, and an antifuse dielectric layer disposed between andin contact with the first and second conductive layers.
 3. The pixel ofclaim 2 wherein the antifuse dielectric layer comprises silicon oxide,silicon nitride, or aluminum oxide.
 4. The pixel of claim 2 wherein eachfirst group antifuse and each second group antifuse can be programmed bya voltage pulse of greater than 14 volts.
 5. The pixel of claim 1wherein at least one of the first group subpixels emits light with adominant wavelength between 450 nm and 490 nm, at least one of the firstgroup subpixels emits light with a dominant wavelength between 490 nmand 570 nm, and at least one of the first group subpixels emits lightwith a dominant wavelength between 620 and 750 nm.
 6. The pixel of claim1 wherein at least one of the plurality of first group subpixels and atleast one of the plurality of second group subpixels further comprises awavelength-converting layer.
 7. The pixel of claim 6 wherein thewavelength-converting layer comprises quantum dots or quantum wells. 8.The pixel of claim 1 wherein each first group control circuit and eachsecond group control circuit comprise at least one transistor andwherein the at least one transistor comprises single crystalsemiconductor.
 9. The pixel of claim 1 wherein the largest dimension ofat least one of the at least one first group LEDs is less than 20microns.
 10. The pixel of claim 1 where each LED of the first group ofsubpixels comprises gallium nitride, indium gallium nitride, indiumarsenide, aluminum gallium arsenide, gallium arsenide, galliumphosphide, gallium arsenide phosphide, aluminum indium galliumphosphide, gallium arsenide nitride, aluminum indium arsenide, aluminumantimonide, indium phosphide, indium antimonide, or indium galliumarsenide phosphide, or combinations thereof.
 11. A pixel comprising: aplurality of data lines, wherein each data line is coupled to a datacircuit; a plurality of select lines, wherein each select line iscoupled to a select circuit; a plurality of first group subpixelswherein each first group subpixel comprises at least one first groupLED, a first group control circuit coupled to the at least one firstgroup LED, and a first group antifuse disposed between a data line andthe first group control circuit; and a plurality of second groupsubpixels, wherein each second group subpixel comprises at least onesecond group LED, a second group control circuit coupled to the at leastone second group LED, and a second group antifuse disposed between adata line and the second group control circuit.
 12. The pixel of claim11 wherein each first group antifuse and each second group antifusecomprise a first conductive layer, a second conductive layer, and anantifuse dielectric layer disposed between and in contact with the firstand second conductive layers.
 13. The pixel of claim 12 wherein theantifuse dielectric layer comprises silicon oxide, silicon nitride, oraluminum oxide.
 14. The pixel of claim 12 wherein each first groupantifuse and each second group antifuse can be programmed by a voltagepulse of greater than 14 volts.
 15. The pixel of claim 11 wherein atleast one of the first group subpixels emits light with a dominantwavelength between 450 nm and 490 nm, at least one of the first groupsubpixels emits light with a dominant wavelength between 490 nm and 570nm, and at least one of the first group subpixels emits light with adominant wavelength between 620 and 750 nm.
 16. The pixel of claim 11wherein at least one of the plurality of first group subpixels and atleast one of the plurality of second group subpixels further comprises awavelength-converting layer.
 17. The pixel of claim 16 wherein thewavelength-converting layer comprises quantum dots or quantum wells. 18.The pixel of claim 11 wherein each first group control circuit and eachsecond group control circuit comprise at least one transistor, whereinthe at least one transistor comprises single crystal semiconductor. 19.The pixel of claim 11 wherein the largest dimension of at least one ofthe at least one first group LEDs is less than 20 microns.
 20. The pixelof claim 11 where each LED of the first group of subpixels comprisesgallium nitride, indium gallium nitride, indium arsenide, aluminumgallium arsenide, gallium arsenide, gallium phosphide, gallium arsenidephosphide, aluminum indium gallium phosphide, gallium arsenide nitride,aluminum indium arsenide, aluminum antimonide, indium phosphide, indiumantinionide, or indium gallium arsenide phosphide, or combinationsthereof.
 21. A pixel comprising: a plurality of data lines, wherein eachdata line is coupled to a data circuit; a plurality of select lines,wherein each select line is coupled to a select circuit; a plurality ofpower lines; a plurality of first group subpixels wherein each firstgroup subpixel comprises at least one first group LED, a first groupcontrol circuit coupled to the at least one first group LED, and a firstgroup antifuse disposed between a power line and the first group controlcircuit; and a plurality of second group subpixels, wherein each secondgroup subpixel comprises at least one second group LED, a second groupcontrol circuit coupled to the at least one second group LED, and asecond group antifuse disposed between a power line and the second groupcontrol circuit.
 22. The pixel of claim 21 wherein each first groupantifuse and each second group antifuse comprise a first conductivelayer, a second conductive layer, and an antifuse dielectric layerdisposed between and in contact with the first and second conductivelayers.
 23. The pixel of claim 21 wherein the antifuse dielectric layercomprises silicon oxide, silicon nitride, or aluminum oxide.
 24. Thepixel of claim 21 wherein each first group antifuse and each secondgroup antifuse can be programmed by a voltage pulse of greater than 14volts.
 25. The pixel of claim 21 wherein at least one of the first groupsubpixels emits light with a dominant wavelength between 450 nm and 490nm, at least one of the first group subpixels emits light with adominant wavelength between 490 nm and 570 nm, and at least one of thefirst group subpixels emits light with a dominant wavelength between 620and 750 nm.
 26. The pixel of claim 21 wherein at least one of theplurality of first group subpixels and at least one of the plurality ofsecond group subpixels further comprises a wavelength-converting layer.27. The pixel of claim 26 wherein the wavelength-converting layercomprises quantum dots or quantum wells.
 28. The pixel of claim 21wherein each first group control circuit and each second group controlcircuit comprise at least one transistor, wherein the at least onetransistor comprises single crystal semiconductor.
 29. The pixel ofclaim 21 wherein the largest dimension of at least one of the at leastone first group LEDs is less than 20 microns.
 30. The pixel of claim 21where each LED of the first group of subpixels comprises galliumnitride, indium gallium nitride, indium arsenide, aluminum galliumarsenide, gallium arsenide, gallium phosphide, gallium arsenidephosphide, aluminum indium gallium phosphide, gallium arsenide nitride,aluminum indium arsenide, aluminum antimonide, indium phosphide, indiumantimonide, or indium gallium arsenide phosphide, or combinationsthereof.